aluminum nitride

美 [əˈlumənəm ˈnaɪtraɪd]

氮化铝

化学



双语例句

  1. Study of the Process of the Flip Chip Package Based on Aluminum Nitride Substrate
    以氮化铝陶瓷为基板的倒装式封装工艺研究
  2. Powder injection molding of high thermal conductivity aluminum nitride ceramics
    高导热氮化铝陶瓷的粉末注射成形技术
  3. Properties of Aluminum Nitride Thin Films Grown by Radio Frequency Magnetron Sputtering Using AlN Target
    AlN靶材射频磁控溅射制备AlN薄膜及性质研究
  4. Inorganic: aluminum nitride, zirconia, potassium fluoride, bentonite, kaolin, barium sulfate, lead sulfate, sodium aluminum, chromium oxide, titanium dioxide.
    无机物:氮化铝、二氧化锆、氟化钾、膨润土、高岭土、硫酸钡、硫酸钻、铝酸钠、氧化铬、钛***。
  5. Optimization of bath composition for electroless copper plating on aluminum nitride ceramic surface
    氮化铝陶瓷表面化学镀铜溶液组成的优化
  6. Study of deposition and properties of aluminum nitride thin films by mediate frequency pulsed magnetron sputtering
    中频脉冲磁控溅射沉积氮化铝薄膜及性能研究
  7. Study of the Character of Aluminum Nitride Co-fire Metalization and Multilayer Thin Film Metalization
    氮化铝共烧基板金属化及其薄膜金属化特性研究
  8. Preparing aluminum nitride thin film by atomic layer deposition
    氮化铝薄膜的原子层淀积制备及应用
  9. Iodine-assisted Synthesis of Silicon Nitride, Aluminum Nitride at Low Temperature
    碘辅助低温合成氮化硅、氮化铝纳米材料
  10. Effect of heat treatment on water resistance of aluminum nitride powder
    热处理对氮化铝粉末抗水性的影响
  11. The chemical stability of aluminum nitride powder under water vapor and/ or aqueous environment was studied. Effect of heat treatment on the chemical stability and water resistance of the powder was also investigated.
    研究了氮化铝粉末在水蒸气/水环境中的化学稳定性,探讨了热处理工艺对氮化铝粉末抗水性的影响。
  12. Most of the nitrogen in steel has changed into Aluminum nitride through reaction with Al in steel.
    退火后钢中的大部分氮(约占钢中总氮80%左右)已与钢中铝生成了氮化铝。
  13. Aluminum nitride ( AlN) thin films have been successfully deposited on Si ( 100) and Pt/ Ti/ Si ( 100) by DC magnetron reactive sputtering.
    采用直流磁控反应溅射法,在Si(100)和Pt/Ti/Si(100)上制备了AlN薄膜。
  14. The growth mechanism of monocrystal aluminum nitride nanowires at low temperature
    低温条件下单晶氮化铝纳米线生长机理的研究
  15. We obtained rods, flakes, spheres, porous aluminum nitride by control of synthesis conditions, respectively.
    实验中通过控制条件得到了棒状、片状、球状和多孔形貌的氮化铝粉末。
  16. Synthesis and Optical Properties of Hexagonal Aluminum Nitride Nanocrystals
    纳米六方相氮化铝的合成和光学性能研究
  17. Effects on the rheological behavior of slurry for tape-casting aluminum nitride substrate were studied systematically.
    系统地研究了流延法制备氮化铝基片过程中影响流延浆料粘度的主要因素。
  18. This paper introduces the physical properties of aluminum nitride waveguide developed by MOCVD, especially on its optical property, and acquires the precise experiment data of its refractive index by waveguide mathod.
    本文介绍了用MOCVD制作的氮化铝波导的物理特性,尤其对氮化铝光波导薄膜的光学特性进行了深入的研究,用波导测试的方法获得了其折射率的精确实验数据。
  19. Study on optical Property of aluminum nitride thin film
    氮化铝(AIN)薄膜的光学特性研究
  20. Effect of aluminum nitride powder characteristics on Microstructure and properties of aluminum nitride-boron nitride composite ceramics
    氮化铝粉末特性对氮化铝-氮化硼复合陶瓷结构和性能的影响
  21. Aluminum nitride ( AlN) ceramic is a kind of high-tech.
    氮化铝(AlN)陶瓷是一种性能优良的高技术陶瓷。
  22. Morphologies and Growth Mechanisms of Aluminum Nitride Whiskers by SHS Method ( 2)
    自蔓延高温合成氮化铝晶须形态和生长机理研究(2)
  23. Progress in Research and Development of Aluminum Nitride ( AlN) Ceramics
    氮化铝陶瓷研究和发展
  24. In this paper, the possibility of copper direct bonding to aluminum nitride substrate is studied, and the bonding mechanism is investigated by means of SEM and EDX.
    研究了铜与氮化铝陶瓷直接键合的可行性,运用扫描电镜(SEM)、电子能谱(EDX)对键合机理作了一定的分析和探讨。
  25. Study on Preparation of Standard Sample of Precipitated Phase of Manganese Sulphide and Aluminum Nitride
    钢中硫化锰和氮化铝析出相标准样品的研制
  26. Aluminum Nitride Ceramics are metalized by electroless Ni-P plating. The metallization process has also been studied.
    在AlN陶瓷上化学镀Ni-P合金,使其表面金属化,研究镀液组成、pH值、镀液温度等对镀层性能和镀速的影响。
  27. There was a long initial phase in the hydrolysis oxidation of aluminum nitride, which was comparatively slow.
    而氮化铝水解氧化过程有一个较长时间的起始阶段,此阶段反应进行较缓慢。
  28. Aluminum Nitride is an ideal substrate and packaging material applied in high power devices, circuits and modules due to high thermal conductivity.
    氮化铝(AlN)陶瓷是最理想的高导热基板和封装材料,可广泛应用于高功率器件、电路和组件。
  29. Ti-Al-N layer consisted of titanium nitride, aluminum nitride and a little titanium oxide, aluminum oxide.
    Ti-Al-N层主要由钛的氮化物、铝的氮化物和少量的钛的氧化物、铝的氧化物组成。